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To reveal the influence of Al mole fraction on the microwave noise performance of AlxGa1-xN/GaN HEMTs, numerical analysis is performed on the intrinsic noise by reducing its value from 35% to 25% and 15% in this paper. A model based on measurement results is used and simulations are carried out by commercial TCAD soft Silvaco Atlas. The I-V curves and both of the gate and drain noise spectral density...
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