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Recent experiments on MOSFETs and non-volatile memory cells indicated a non-trivial bias and temperature dependence of substrate (I/sub B/) and gate (I/sub G/) currents whenever the drain voltage (V/sub DS/) becomes comparable to the critical values corresponding to the band gap, and the Si-SiO/sub 2/ barrier energies. In this paper, these experiments are analyzed by means of detailed Monte Carlo...
This paper reports new homogeneous hot-electron injection data at 300 K and 77 K covering applied voltages from well below to well above the Si-SiO/sub 2/ barrier height, and a wide range of oxide fields. We found that, in contrast to the MOSFET case, homogeneous injection shows two different regimes for accelerating voltages below and above the barrier height. A simple interpretation of the data...
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