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In this paper, a comparison between the DCG-FGT (Dual-Control-Gate Floating-Gate Transistor) and its equivalent circuit composed of standard components is proposed. We demonstrate the DCG-FGT advantages with measurement and simulations under electrical simulator (ELDO). It is not easily to reproduce the DCG-FGT operating mode with standard MOS technology.
A new comparator based on Dual Control Gate Floating Gate Transistor (DCG-FGT) that allow increasing input voltage range over rail-to-rail is proposed. The comparator operates with a supply voltage ranging from 1.6V to 3.6 V in 90 nm CMOS technology. The comparator is simulated under ELDO and consumes 3.2μA under typical condition.
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