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In this paper, a 5.8-GHz amplifier with novel RF electrostatic discharge (ESD) protection is proposed in GaAs 2-mum HBT process. The amplifier incorporates with the ESD devices to form a band pass filter (BPF) structure with good impedance matching for RF ESD protection. In the mean while, an amplifier without ESD protection and another with conventional ESD protection are fabricated in parallel for...
In this paper, a 5.8-GHz amplifier with novel RF electrostatic discharge (ESD) protection is proposed in GaAs 2-μm HB T process. The amplifier incorporates with the ESD devices to form a band pass filter (BPF) structure with good impedance matching for RF ESD protection. In the mean while, an amplifier without ESD protection and another with conventional ESD protection are fabricated in parallel for...
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