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This paper investigates the high-temperature thermal response of a Ni/SiC-Schottky diode with a severe degree of contact in homogeneity. Forward characteristics, visibly affected by non-uniform Schottky barrier height in the 25°C-450°C domain are very accurately reproduced using a model based on parallel conduction. Constant sensitivity is established for the analyzed sample in the entire measurement...
The technological flow similarities between two devices on silicon carbide, a Schottky diode and a MOS capacitor, are presented. The devices are used as temperature and hydrogen sensors, respectively. Both devices are characterized up to high temperatures, 400°C for Schottky diode and 300°C for MOS capacitor. Performed measurements demonstrate good forward voltage linearity with temperature (Schottky...
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