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This paper reports a parameter extraction method based on a new model for the high frequency capacitance–voltage (C(V)) characteristics of 6H-SiC boron compensated junctions. The C(V) model confirms the presence of two type regions (p − and n − ) in the quasi-intrinsic layer induced by boron compensation. The extracted values of the net doping of these zones (6–10×10 12 cm...
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