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4H-SiC JBS diodes have been manufactured on a Norstel epitaxied N/N+ substrate using a JTE as edge termination. A breakdown voltage higher than 3.5 kV has been measured on 0.16 and 2.56 mm2 diodes. The leakage current in the 25degC-300degC temperature range depends on the bipolar/Schottky ratio whereas in forward mode its impact is minor. Diodes have been stressed in DC mode to show that the 2.56...
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