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This paper descibes variety of methods to examine the electrical and physical characteristics of the isolation layer deposited on TSV(Through-Si-Via). A sample was manufactured for the experiment with a diameter of 10 mum and a depth of 50 mum using deep-RIE (reactive ion etching). SiO2 thin-film was deposited on the TSV sample by two separate procedures: PECVD (plasma enhanced chemical vapor deposition)...
The polymer adhesive bonding technology using wafer-level technology was investigated to adhere silicon to glass wafer and it analyzed warpage caused in cemented wafer and the degree of intensity. We executed the wafer adhesion depending on temperature (130degC, 190degC), the pressure (5000 N, 8000 N), the height of the adhesive layer (10 mum, 20 mum) and the adhesive time (process time, the time...
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