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In this work, we propose the nonalloyed Schottky Source/Drain (SSD) technology for high voltage InAlN/GaN HEMTs. The proposed device features excellent metal morphology both in lateral and vertical benefiting from the removal of metallic overflow associated with the conventional alloyed Ohmic contacts, which bodes well for device scaling and high breakdown voltage (BV) obtained in the proposed device...
In this paper, we demonstrate 253% improvement in the off-state breakdown voltage (BV) of the lattice-matched In0.17Al0.83N/GaN high-electron-mobility transistors (HEMTs) by using a new Schottky-Source technology. Based on this concept, the Schottky-Source (SS) InAlN/GaN HEMTs are proposed. The SS HEMTs with a LGD of 15 μm showed a three-terminal BV of 650 V, while conventional InAlN/GaN HEMTs of...
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