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Graphene field-effect transistors (G-FETs) are being developed with ever increasing sensitivity as terahertz direct detectors at room temperature. The noise-equivalent power is being reduced towards the order of 1pW/Hz with frequency about 650 GHz. G-FET-based frequency multipliers and subharmonic mixers are becoming new active components for both millimeter and terahertz wave technologies. We report...
We report a room-temperature, low-impedance and high-sensitivity terahertz direct detector based on bilayer graphene field-effect transistor (GFET). Epitaxially grown on silicon carbide, the bilayer graphene had an as-grown carrier mobility of 3000 cm2/Vs. The source/drain contacts were formed on the freshly cleaned graphene sheet to minimize the contact resistance and served also as terahertz antennas...
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