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In this study, 2-[2-(2-methoxyethoxy)ethoxy]acetic acid (MEEAA) was used to modify the surface of barium titanate nanoparticles (BT NPs) to enhance the compatibility and dispersion of the BT ceramic fillers in polymer matrix. A uniform coating layer with a thickness about 2 nm was formed on the surface of BT after modification. The poly(vinylidene fluoride)-hexafluoropropene [P(VDF-HFP)] composites...
With the rapid development of science and technology progress, the study and preparation of polymer composite materials with multiple properties has become a hot research topic. In this paper, nano-sized CCTO (CaCu3Ti4O12) and CCTO@Fe3O4 core-shell nanoparticles were prepared using wet chemical method. The CCTO@Fe3O4 nanoparticles were characterized by XRD and SEM. The results suggested that the diameter...
Dielectric materials with high-K, low loss and high breakdown voltage are of great importance for a broad range of applications in modern electronics and electrical power systems. In this work, embedded capacitors were fabricated with BT/ER composites as the dielectric layer. The composites were modified with Cr Acac which reacted with epoxy matrix. The addition of PEG and Cr Acac enhanced the permittivity...
The dielectric properties of the polyvinylidene fluoride (PVDF) composites filled with BaTiO3-supporting Ag (BT-Ag) hybrid particles were investigated. The BT-Ag/PVDF composites exhibited a high dielectric permittivity of 160 and relatively low dielectric loss of 0.146 at 100 Hz when the concentration of BT-Ag hybrid fillers approached 55.28 vol. %. The high permittivity was mainly ascribed to the...
Dielectric materials with high-K, low loss and high breakdown voltage are of great importance for a broad range of applications in modern electronics and electrical power systems. In this work, embedded capacitors were fabricated with BT/ER composites as the dielectric layer. The composites were modified with Cr Acac which reacted with epoxy matrix. The addition of PEG and Cr Acac enhanced the permittivity...
The dielectric properties of the polyvinylidene fluoride (PVDF) composites filled with BaTiO3-supporting Ag (BT-Ag) hybrid particles were investigated. The BT-Ag/PVDF composites exhibited a high dielectric permittivity of 160 and relatively low dielectric loss of 0.146 at 100 Hz when the concentration of BT-Ag hybrid fillers approached 55.28 vol. %. The high permittivity was mainly ascribed to the...
This paper reports a FeAISi (sendust)/CaCu3Ti4O12 (CCTO)/Epoxy three-phase composite prepared through a simple procedure. The magnetic-dielectric properties of the composites were analyzed using impedance analyzer (Agilent 4991) in a frequency range from 106 to 109 Hz. The results show the weak coupling effect between the FeAISi and CCTO fillers in the three-phase composite. The real permeability...
This paper reports a nickel (100nm)/calcium copper titanate (1um)/ Polyvinylidene Fluoride three-phase composite prepared through a simple blending and hot-molding procedure. The microstructure and dielectric properties of the composites were analyzed using scanning electron microscope (SEM), and impedance analyzer. The results show that the dielectric constant εr rises from 49 to 140 with the loss...
The metal-polymer composites can possess a high dielectric constant with low filler content, and preserve the flexibility of the polymer matrix. Nickel (Ni) powder could be cheaply obtained through aqueous chemical reduction and not easily oxidized in air. In this study, composites of poly(vinylidene fluoride) (PVDF) filled with 0.7μm (average size) of metallic particles of nickel (Ni) were prepared...
Nano-sized Ag particles were prepared through a wet chemical reduction route and treated with tetraethoxysilane (TEOS) to form an amorphous SiO2 thin layer on the particles surface (Ag@SiO2). Ag@SiO2/Epoxy composite film was fabricated via coating process. The experimental results showed that the dielectric constant k increased gradually with Ag@SiO2 content before reaching the percolation threshold...
The miniaturization trend of integrated circuits (ICs) calls for replacing discrete passive components with embedded passives. Among the passive components, the embedded decoupling capacitors which are used for simultaneous switching noise suppression have drawn great attention. It is because decoupling capacitors should be placed as near as possible to a chip to reduce parasitic inductance. Important...
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