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A new contact RRAM cell realized by TiN/TiON layers stacked between the W-plug and n+ diffusion region inside a small 80 ?? 80 nm contact hole is demonstrated using 90nm CMOS logic technology. This work reports the first time a resistive switching characteristics of the TiON layers sandwiched between the metal and Si substrate. The new Contact ReRAM cell exhibits highly stable read window and very...
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