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Magnetoresistive RAMs (MRAMs) are the new generation of nonvolatile memories that use magnetic tunnel junctions (MTJs) to store bit information. Horizontal (bit and source) and vertical (word) lines partition the MRAM into a 2-D grid similar to a conventional memory. This paper relies on a logic-in-memory architecture where MRAM cells are placed in close proximity so that they can behave both as logic...
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