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At very low temperature, when optical phonon emission is the dominant scattering mechanism, the phenomenon known as Optical Phonon Transit Time Resonance (OPTTR) may originate current oscillations in n+ nn+ diodes at frequencies in the terahertz range. In this work, by means of Monte Carlo simulations, we study the optimum conditions for the onset of such mechanism in GaN diodes. For this purpose,...
By means of a semi-classical Monte Carlo simulator with a consistent self-heating model we have analyzed how the static DC characteristics of GaN HEMTs are modified with respect to the constant room temperature model. The main consequence of the heating of the devices is a decrease of the drain conductance, mainly when the dissipated power is high (high VDS and VGS). Regarding the dynamic SSEC parameters,...
We have developed an ensemble Monte Carlo simulator self-consistently coupled with a 2D Poisson solver for the analysis of AlGaN/GaN and related heterostructures. Special attention has been paid to the implementation of dislocation scattering, allowing to correctly reproduce the measured electron mobility in the GaN channel of the heterostructures. The influence of surface polarization charges at...
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