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Third-order nonlinear optical phenomena have been intensively studied in integrated structures of crystalline silicon, Hydex, and silicon nitride for different applications, from classical to quantum photonics. As any other material, also porous silicon PSi is characterized by a third-order nonlinear response. Previous works have focused mainly on third-harmonic generation or two-photon absorption...
An integrated source of time-energy entangled photons is demonstrated through resonantly enhanced spontaneous four-wave mixing in a silicon micro-ring resonator. A Franson type set-up is employed to show the quantum interference between photon pairs with a visibility exceeding 90% and a violation of the Bell's inequality by more than 10 standard deviations. The high spectral brightness and the extremely...
We demonstrate an integrated silicon source of time-energy entangled photons. Entanglement is proved using a Franson type experiment, obtaining visibility exceeding 90% and a violation of the Bell's inequality by more than 10 standard deviations.
We present simple expressions for the power generated via continuous-wave classical and quantum nonlinear optical processes in integrated devices, making it easy to benchmark quantum performance based on the results of classical experiments.
We present “direct imprinting of porous substrates” (DIPS) as a strategy for nanoscaled (<100nm) patterning of porous nanomaterials. DIPS is further investigated as a low-cost, high-throughput technique for fabricating optical structures with enhanced light-matter interaction.
We predict that large enhancement of spontaneous Raman scattering cross section can be achieved in an experimental scenario where the molecules are placed on planar dielectric structures supporting guided modes or Bloch Surface Waves.
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