The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have studied the in-situ boron (B) doping of germanium (Ge) and silicon (Si) in Reduced Pressure-Chemical Vapor Deposition. Three growth temperatures have been investigated for the B-doping of Ge: 400, 600 and 750°C at a constant growth pressure of 13300Pa (i.e. 100Torr). The B concentration in the Ge:B epilayer increases linearly with the diborane concentration in the gaseous phase. Single-crystalline...
In a 300mm industrial Reduced Pressure–Chemical Vapour Deposition tool we have assessed the advantages and drawbacks of disilane for the low temperature growth of Si and SiGe. Four distinct regions can be noticed on the Arrhenius plot of the Si growth rate at 2660Pa (i.e. 20Torr) from Si 2 H 6 as a function of the reverse growth temperature. For T>850°C, we are in the high temperature,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.