The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
During process development of post etch cleaning for dual damascene copper/SiOC-H structures, two different kinds of new problems were faced. While a good efficiency is obviously still needed, attention must also be given to dielectric modification and photoresist poisoning which can be induced by the cleaning processes. This study examines different ways of characterization of these phenomenon.
The integration of dual damascene-copper/low-k structures requires the development of new cleaning processes and chemistries compatible with the new materials. This study examines the opportunities for plasma cleaning and wet cleaning.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.