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We have realized the first 10-Gbps direct modulation of a 1.3-mum-range laser diode with an InGaAs metamorphic buffer on a GaAs substrate. A 200-mum-long device had threshold currents as low as 5.2 and 11.4 mA at 25 and 85degC, respectively. The maximum operating temperature was 135degC. This excellent performance is attributed to the high quality InGaAs metamorphic buffer.
The first direct modulation of a 1.3 mum-range metamorphic laser diode on a GaAs substrate has been realised. A 200 mum-long device had threshold currents as low as 5.2 and 11.4 mA at 25 and 85degC, respectively. This laser also achieved 10 Gbit/s direct modulation up to 85degC.
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