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In this report we present results of theoretical and experimental investigation of the detected voltage in a constricted n-n+junction of heavily doped GaAs sheets in a wide temperature range under the action of f= 65.34 GHz microwave radiation. The planar microwave diodes were fabricated on the base of MBE heavily doped structures: (i) 100 nm thick surface n-GaAs layer (sample 112); (ii) 5 delta-doped...
Detection properties of planar microwave diodes have been investigated under the action of external magnetic field at room temperature. The diodes were fabricated from modulation doped semiconductor structures having planar asymmetrically and symmetrically narrowed n-n+ junctions. Their operation is based on non-homogeneous carrier heating by a microwave electric field. Frequency dependence of the...
Microwave detectors on the base of asymmetrically shaped n-n junction of various semiconductor structures revealed possibility to detect electromagnetic radiation in very broad frequency range, i.e. from microwaves up to terahertz region. However, such detectors suffer from their low voltage sensitivity. Introduction of gate over asymmetrically shaped two dimensional electron gas (2DEG) channel in...
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