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In this report we present results of theoretical and experimental investigation of the detected voltage in a constricted n-n+junction of heavily doped GaAs sheets in a wide temperature range under the action of f= 65.34 GHz microwave radiation. The planar microwave diodes were fabricated on the base of MBE heavily doped structures: (i) 100 nm thick surface n-GaAs layer (sample 112); (ii) 5 delta-doped...
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