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This paper presents a new coding scheme that considerably increases the efficiency of the channel in multicast setting. Specifically, we study the scenario where three terminals exchange their messages via a satellite gateway. The main difference between the proposed scheme and conventional three-way relay channel is the use of joint channel and network coding. This allows three terminals to transmit...
A novel backgate modulation technique alleviating limitations associated with supply-regulated polar transmitters is proposed. The backgate of a partially depleted silicon-on-insulator metal–semiconductor field-effect transistor with a breakdown voltage of 15 V is used to modulate the gain and output power of an RF power amplifier (PA). The high-impedance backgate provides high-efficiency and wide-dynamic-range...
Enhanced voltage silicon metal-semiconductor-field-effect-transistors (MESFETs) have been fabricated on a 45nm SOI CMOS technology with no process changes. MESFETs scaled to Lg = 184nm were fabricated and show a peak fT of 35GHz, current drive of 112mA/mm and breakdown voltages exceeding 4.5V whereas the nominal CMOS voltage was less than 1V on the same process. The devices were characterized from...
In this paper, a wideband class AB power amplifier (PA) centered around 400MHz with 200MHz bandwidth, featuring a CMOS compatible MESFET on a 150 nm SOI technology is presented. It is the first board level demonstration of a SOI-MESFET based RF PA. SOI-MESFETs are an ideal candidate for integrated RF PAs due to their enhanced voltage capability and high cut-off frequency. The MESFET used in this design...
Metal-semiconductor-field-effect-transistors (MESFETs) have been fabricated using a 150 nm partially depleted silicon-on-insulator CMOS technology. A peak fT of 40 GHz and peak breakdown voltages of up to 12V were measured. Comparatively, the CMOS transistors on the same process have a maximum steady-state voltage limit of 1.95V. TOM3 model for MESFET developed in ADS. The demonstrated high cut-off...
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