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The isolation characteristics of COB (capacitor over bit-line)-DRAMs was degraded, only when TEOS (tetraethyl orthosilicate)-BPSG (boron phosphor silicate glass) film was used for the interlayer oxide, which was covered with the silicon nitride film. The measurement of V fb (flat band voltage) of the capacitor indicated that there were the positive charges around the SiO2 Si interface, which...
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