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Amplified electro-absorption modulators provide a realistic solution for colorless 10 Gb/s uncooled ONUs. Integrated photonic functions of this component open also new possibilities for multiformat single chip duplexers and QPSK line modulators.
An improved electromagnetic simulation (EM) based approach has been developed for optimization of the electrical to optical (E/O) transmission properties of integrated electro-absorption modulated lasers (EMLs) aiming at 100 Gbit/s Ethernet applications. Our approach allows for an accurate analysis of the EML performance in a hybrid microstrip assembly. The established EM-based approach provides a...
A large electro-optic bandwidth Electro-absorption Modulated laser, with a Semi-Insulating AlGaInAs/InP Buried Heterostructure, has been associated with a 100 Gb/s InP Heterojunction Bipolar Transistor Multiplexing circuit, exhibiting an open eye diagram.
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