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We report the triple-functionality at 10-Gb/s of an integrated R-EAM-SOA, including modulation, detection and noise-mitigated 2R all-optical signal regeneration. The obtained results demonstrate its high potential for a multi-operation device in colorless WDM access networks.
Amplified electro-absorption modulators provide a realistic solution for colorless 10 Gb/s uncooled ONUs. Integrated photonic functions of this component open also new possibilities for multiformat single chip duplexers and QPSK line modulators.
We demonstrate long-haul transmission of 50-Gb/s RZ and NRZ-DQPSK signals generated using an electroabsorption-based optical vector modulator. Transmission over 1650 km is achieved with less than 1.2 dB OSNR penalty relative to back-to-back performance.
We report on the first demonstration of low-penalty error-free 10 Gb/s transmission using an integrated EML transmitter over 113 km thanks to dual modulation applied simultaneoulsy to the laser and the modulator.
A large electro-optic bandwidth Electro-absorption Modulated laser, with a Semi-Insulating AlGaInAs/InP Buried Heterostructure, has been associated with a 100 Gb/s InP Heterojunction Bipolar Transistor Multiplexing circuit, exhibiting an open eye diagram.
We report generation of 50-Gb/s RZ-DQPSK signal, without an external pulse carver, using an electroabsorption modulators-based hybrid modulator. We demonstrate the first error-free 50-Gb/s RZ-DQPSK generation using a semiconductor-based modulator with low drive voltages of 2.3 V.
A selective area growth model was used to engineer a remote amplified modulator with an AlGaInAs multi-quantum well active layer. The selective mask layout was designed to fulfill special component requirements including +35 nm SOA gap detuning and low polarization dependence. The fabricated reflective device exhibits 10 dB maximum insertion gain and operates at 10 Gbit/s over 80 nm spectral range.
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