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For the first time, high-resolution carrier imaging has been carried out on (110)/(100) pFETs and nFETs with scanning spreading resistance microscopy (SSRM). The S/D of (110) pFETs shows less lateral distribution than that of (100), strongly indicating 2D-channeling effect of boron I/I. Direct evidence has been shown that As out-diffusion under NiSi made conductive paths that degrade junction leakage...
Physics and technology of dopant-segregated Schottky (DSS) MOSFETs are reported. A novel approach to achieve low Schottky barrier height (phib) is proposed and demonstrated. The segregated dopants at the metal/semiconductor interface effectively modulate phib. The DSS junction significantly improves the current drivability of metal-source/drain transistors. We, for the first time, demonstrated CMOS...
We studied extremely low interface resistance and thermal stability of the interface of NiSi/Si junctions with Pt (Ni(Pt)Si/Si junctions) based on first-principles calculation. The physical origin of thermal stability of NiSi enhanced by Pt is clarified by the calculations. Our calculations show clear difference of energies for dopant atoms of As and B between PtSi/Si and NiSi/Si. The results obtained...
A new technique to enhance the metal segregation at NiSi/Si interface for reducing contact resistance in source/drain electrodes is proposed. It is demonstrated that metal segregation at the junction of pre-amorphized NiSi/Si using ion-implantation leads to reduction of Schottky barrier height by > 0.2 eV. This modulation width is far beyond the previous metal segregation technique [1] and allows...
We successfully demonstrated Schottky barrier height modulation in metal/Ge Schottky junction by inserting an ultrathin interfacial SiN layer. The SiN layer suppressed strong Fermi level pinning in metal/Ge junction, which resulted in effective control of the Schottky barrier height. We systematically investigated its physics, for the first time, and almost zero Schottky barrier height was successfully...
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