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Microstructures of microcrystalline silicon (μc-Si) deposited at a high-growth-rate have been investigated in order to apply to the photovoltaic i-layer. μc-Si films were prepared by very-high-frequency (100MHz) plasma-enhanced chemical vapor deposition at 180°C. High growth rates of 3.3–8.3nm/s have been achieved utilizing high deposition pressures up to 24Torr and large input powers. Applying μc-Si...
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