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Post deposited Annealing of high-permittivity HfTiO gate dielectrics on Ge substrate in different gases (N2, NO and N2O) is investigated, and sub-nanometer equivalent oxide thickness (EOT) HfTiO dielectric has been achieved. Results of Transmission Electron Microscope (TEM), Atomic Force Microscope (AFM) and electrical measurement indicate that wet N2 annealing can greatly suppress the growth of interlayer...
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