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A non-classical device structure namely self-aligned quasi-silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) field-effect transistor with pi-shaped semiconductor conductive layer (SA-piFET) is presented, seeking to improve the performance and upgrade the reliability of the SOI-based devices. Designed to equip with a SA single crystal silicon channel layer, plus a natural source/drain (S/D)...
In the case of the fully depleted silicon-on-insulator (FDSOI) FET, it is a hard task for the suppression of short-channel effects (SCEs) without using the ultra-thin body type; unless some technical tricks (e.g., halo doping, threshold voltage adjustment, retrograde channel implant, ultra-shallow junction depth) are applied (Pawlak, 2006). The results of previous study showed that the pi-FET (quasi-SOI...
In this paper, a new device structure called the quasi-SOI MOSFET with pi-shaped semiconductor conductive layer is proposed and demonstrated. In this structure, the pi-shaped source/drain layer is formed by the block oxide which consists of three separate oxide islands under the source, the drain, and the body regions, respectively. In other words, due to the three separate oxide islands forming two...
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