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In this paper, we present a simulation study of short-channel characteristics of self-aligned dual-channel source/drain-tied (SA-DCSDT) MOSFETs. Two compared devices are designed, namely, the normal SA-DCSDT MOSFET and the ultimate SA-DCSDT MOSFET. According to simulation results, the DC is used to obtain a high drain saturation current, the SDT is used to get improved thermal stability, and the BOX...
In this paper, we investigate the important device characteristics of block oxide (BO) MOSFETs (bMOS), which are the BO length (Lbo) and the height (Hbo). According to the simulation results, the variation of Lbo and Hbo strongly affects the device characteristics, such as the sub-threshold swing, threshold voltage, on-state drain current (Ion), and the off-state drain current (Ioff). This is because...
In this paper, we use the junctionless (JL) technology to design both JL middle-gate vertical MOS (JLMGVMOS) and JL pseudo tri-gate VMOS (JLPTGVMOS) for performance comparison on analog metrics. According to TCAD simulations, the JLPTGVMOS devices demonstrate excellent characteristics, such as high transconductance (gm), transconductance generation factor (gm/Id), and voltage gain Avi, when compared...
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