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Electron transport properties in AlGaN/GaN heterostructures with different Al-contents have been investigated from room temperature up to 680 K. The temperature dependencies of electron mobility have been systematically measured for the samples. The electron mobility at 680 K were measured as 154 and 182 cm2/V·s for Al0.15Ga0.85N/GaN and Al0.40Ga0.60N/GaN heterostructures, respectively. It was found...
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