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In this study, the thick AlGaN epilayers have been grown on the c-plane sapphire substrate and the free-standing GaN substrate using low-temperature AlN nucleation layers by low-pressure metal-organic chemical vapor deposition (LPMOCVD). High resolution X-ray diffraction (HRXRD), atom force microscopy (AFM), scanning electron microscopy (SEM), photoluminescence (PL) and Raman scattering measurements...
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