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We have investigated properties of Antimony implanted Si such as crystalline defect, dopant distribution, and sheet resistance before and after annealing using TEM, SIMS, and 4-point probe. The sheet resistance of Sb implanted Si shows 35% lower than Arsenic, even though junction depth is 25% shallower. Electrical behaviors of Sorce/Drain extension implanted with Sb show 10% improvement of Ion/Ioff...
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