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Films of Tl doped CsI in the 10 nm to 3 µm thickness range were deposited on silicon substrates using the physical vapor deposition technique under vacuum conditions. The films exhibited a columnar growth behavior with a preferential orientation along 〈200〉. The photoluminescence (PL) properties of the deposited films were studied in the 77–300 K temperature range and found to be significantly different...
The sequence of high pressure phases in InP and InAs crystals was studied by density functional calculations. The transition from ambient pressure zinc‐blende to rocksalt (NaCl) phase is of the first order and transitions pressures for crystals are in agreement with experiments. The high pressure phase transition from cubic NaCl phase to orthorhombic Cmcm phase in InP and InAs was studied by monitoring...
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