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It has been demonstrated that external uniaxial stress applied to silicon crystals doped by bismuth and antimony influences on the emission spectrum of intracenter lasers under CO2 laser pumping. For small stress the spin-orbit coupling of lower laser working states can be tuned. The details of frequency change depend on crystallographic orientation and donor element.
Terahertz stimulated emission (4-6 THz) from optically excited group-V donors (phosphor P, antimony Sb, arsenic As, bismuth Bi) in axially compressed silicon crystal has been studied. As shown CW laser operation of P, Sb, As donors become reachable due to the laser threshold decrease induced by the stress.
We report on the development of a compact, easy-to-use terahertz radiation source, which combines a quantum-cascade laser (QCL) with a compact, low-input-power Stirling cooler. The QCL, which is based on a two-miniband design, has been developed for high output and low electrical pump power. Special care has been taken to achieve a good thermal coupling between the QCL and the cold finger of the cooler...
Liquid helium temperature experimental study of terahertz (4-6 THz) lasing of optically excited group-V donors in axially compressed silicon crystal are presented and discussed.
Heterodyne mixing of the far infrared p-Ge intervalenceband pulse laser and the optically pumped continuous wave ring gas laser at 117.7 μm (CH 2 F 2 ), 118.8 μm (CH 3 OH) and at 184.3 μm (CH 2 F 2 ) revealed the p-Ge laser mode fine structure with a resolution below 1 MHz, the absolute mode linewidth and a mode tunability of 25 MHz during the p-Ge laser pulse...
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