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We engineer a scalable and CMOS-friendly RRAM stack using down to 3nm ALD-based Ta2O5. The 20nm-sized TiN\Ta2O5\Ta device operated at 50µA exhibits ultra-fast write (∲5ns) at moderate voltage (<2V) with >109 write endurance. We also demonstrate excellent disturb and retention characteristics, which we relate to the appropriate tuning of the oxygen chemical-potential profile along the filament...
This paper presents a detailed comparative study of the switching characteristics of resistive memory devices, with NiO or HfO2 active materials and Pt electrodes, based on identical integration schemes. Material screening and qualification are performed using structural and composition analyses. Preliminary electrical investigations outline the non-polar switching behavior of both HfO2 and NiO devices...
The Phase Change Memory (PCM), is one of the most promising concepts, as a replacement of Flash memories that should be put in production in next years. However, even if the robustness of such technology is demonstrated for consumer stand-alone applications with typically GST as phase-change chalcogenide material, data retention at high temperature remains an issue, and seemingly even GST based alloys...
This work presents a thorough comparative assessment of undoped GST and GeTe active phase-change (PC) materials for application to embedded memory devices (in particular consumer and automotive products). The material screening and qualification is performed through optical reflectivity and 4-probes resistivity measurements. Electrical performances are then investigated through tests of lance-cell...
In this paper, the temperature dependence of the programmed resistance states in GST-based (GST, Ge2Sb2Te5) phase-change memories is analyzed. Memory cells were programmed over the available current range and were measured at different temperatures. The purpose was to determine a relationship between the temperature behaviour of the cell resistance and the programmed current level. Measurements were...
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