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High-quality GaN films were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy. The Hall mobility as high as 790cm 2 /Vs with the carrier concentration of 7.6x10 16 cm -3 at 300K along with low dislocation density of 5x10 7 cm -2 have been achieved. The X-ray rocking curve full-width at half-maximum were 61 and 232arcsec...
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