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The polarity-controlled growths of GaN and AlN on sapphire substrate by MOVPE and MBE were demonstrated. The effects of surface stoichiometry on the polarities of both GaN and AlN epilayers in RF-MBE growth were intensively investigated by in situ analysis of coaxial collision impact ion scattering spectroscopy. It was found that the polarity of the GaN epilayer could not change into another polarity...
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