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Crack-free GaN microrods were fabricated on graphene/SiC substrate by hydride vapor phase epitaxy. The GaN microrods were hexagonal with the diameter up to 100µm and the height above 80µm. Raman spectra showed that E2-high peak frequency of GaN microrod near the graphene/SiC surface had 0.3cm−1 decrease compared to stress-free GaN, the stress of the GaN microrod was 0.071GPa. As a result, the microrods...
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