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In this paper we present a compact microstrip bandpass filter using transmission zeros for narrowband characteristics, to be used in the carrier recovery path of a GB/s QPSK receiver. Several filters are designed operating at 20GHz with relative bandwidths (RBW) varying from 1.75% to 10%, and insertion losses varying from 3.5dB to 0.8 dB. A prototype filter is realized and good agreement between the...
A 3.1-to-10.6 GHz Impulse-UWB correlation receiver in a 0.8 mum Si/SiGe HBT technology is presented. The fully monolithic receiver with 0.8mm2 chip size comprises a low-noise amplifier with maximum noise figure of 3.2 dB, two single-ended to differential converters, an analog correlator and a template pulse generator approximating the fifth-derivative of a Gaussian impulse. It operates with pulse...
In this paper a single-ended fully integrated Si/SiGe HBT amplifier working at a center frequency of 79 GHz is presented. The amplifier consists of three cascode stages. A trimmable line technique and an efficient DC filtering network were used. The amplifier shows a maximum measured gain of 13.2 dB at exactly 79 GHz and an excellent reverse isolation of more than 40 dB over the whole measured frequency...
We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 mum SiGe heterojunction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the FCC-allocated bandwidth for ultra-wideband (UWB) systems. The circuit delivers 19.6 dB peak gain with gain variations of 1.3 dB within the entire band from 3.1 to 10.6 GHz. Broadband noise...
We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 mum SiGe heterojunction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the FCC-allocated bandwidth for ultra-wideband (UWB) systems. The circuit delivers 19.6 dB peak gain with gain variations of 1.3 dB within the entire band from 3.1 to 10.6 GHz. Broadband noise...
In this work, the authors present a fully integrated, fully differential amplifier operating at 79 GHz using a highspeed Si/SiGe hetero-bipolar technology. This amplifier needs a single supply voltage and shows high performance such as high gain, excellent reverse isolation and low power consumption (90 mW at 3 V supply voltage). This result was achieved by using multi-stage cascode topology and a...
Distributed single-ended, distributed differential and lumped differential circuit concepts for realisation of linear broadband amplifiers are presented. Concept advantages and disadvantages are discussed. Demonstration circuits of the first two kinds have been fabricated, the third one being currently in fabrication. All three circuits utilise the same SiGe HBT technology. The amplifiers' 3dB cut-off...
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