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To assess the reliability of a high-reliability and complicated system, a reliability assessment method of multi-state system (MSS) based on an accelerated degradation testing (ADT) is proposed. Firstly, the degradation data for ADT is transferred to the data for normal stress test through the acceleration model. According to the transferred data, degradation track and distribution parameters of system...
The effect of operation current on the high-resistance state and the endurance for the -based resistive device is comprehensively studied. Due to the current overshoot by the parasitic capacitances, an excess current leakage for the high-resistance state of the 1R device after the forming and SET stages is observed. The accelerated degradation of the high-resistance state for the ...
Although a significant effort was made recently in the development of binary oxide based resistive memory (RRAM), reliability issue is still the most concern, but less addressed. By stressing the device in high resistance state (HRS) with constant voltage of the same bias polarity during SET process, the disturbed time is found to exhibit extreme low Weibull slope (~0.3). This characteristic can drastically...
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