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Thick Cu single damascene inductors with very high Q factors are integrated on top of a standard aluminum 3LM BEOL process. Obtained Q factors are more than four times higher than Q factors of the inductors of the same geometry processed in the Al 3LM BEOL. For an inductor of 2.8 nH inductance, a Q peak of 24 at 2 GHz was reached by using 4 /spl mu/m thick Cu on a 2 /spl mu/m IMD oxide layer.
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