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The influence of silicon nitride passivation on electron mobility of InGaAs/InP composite channel high electron mobility transistor structures has been studied. An increase in effective mobility mue with a negligible change of sheet carrier density ns after SiN deposition is clearly observed. Our results suggest that the enhancement of mue could be explained under the framework of electrons transfer...
A comparative study of the microwave noise performance between InP high electron mobility transistors (HEMTs) with InGaAs channel and InGaAs/InP composite channel is performed. Detailed microwave noise characteristics of InP-based HEMT with single channel and composite channel are presented. A model is carried out to extract the noise parameters and study the thermal noise performance of InP-based...
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