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We report on 50×50 MEMS-actuated silicon photonic switches with 16V switching voltage and microsecond switching time. 2,500 MEMS cantilever 1×2 waveguide switches have been integrated on 9mm×9mm chips.
We report on a compact germanium photodiode design where single crystal germanium wraps around a single mode silicon waveguide. A 32 µm long, 626 aF, p-i-n device has 0.8 A/W responsivity at 1550 nm.
We report on high-port-count (50×50) fast optical circuit switches with 2.5μs response time. The switch with 2,500 MEMS switching elements have been monolithically integrated on 9×9mm2 dies using silicon photonic MEMS process on 220nm silicon-on-insulators.
Arch-dipole optical antennas with uniform 5nm gaps have been fabricated on Si substrate using deep-UV “spacer” lithography. Strong surface-enhanced Raman scattering (SERS) signals with an enhancement factor of 1.1×108 have been measured.
Guidelines for designing an optical antenna for optimizing the performance of a nanophotodiode are proposed. A nanopatch design is simulated with over 70% absorption efficiency using germanium as the absorber.
Using electron-beam-induced deposition and focused-ion-beam milling, we have fabricated and demonstrated a nanofocusing optical transformer with a 3-dimensionally tapered tip. At the tip, the light is confined to 13-by-80-nm area with intensity enhancement exceeding 1500.
Optical dipole antennas with varying length and width are fabricated using e-beam lithography. Antennas with wider width are shown to exhibit stronger scattering while preserving the same resonance frequency.
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