The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The degradation of packaged GaN HEMTs for high power applications has been studied under long term reverse bias step stress tests. Increases of leakage current and dynamic Ron resistance have been found. This degradation is possibly caused by the formation of localized defects which have been observed by backside electroluminescence imaging. In addition the effect of device layout and substrate material...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.