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With continuous improvement of the figure-of-merit (RdSon vs. BVdss) in high-voltage device, HCI induced device burnout emerged. In this work, we showed that the mechanism of burnout is due to HCI assisted TDDB (HA-TDDB) as evident from various Vg and temperature dependence characterization. We demonstrated that hot-hole assisted TDDB can be initiated by a 3-stage hot-hole induced leakage current...
In this paper, a reliable TDDB lifetime projection by modeling the gate leakage current degradation is proposed. The validity of model is demonstrated by the good agreements with the experimental results. The two-stage Ig degradation and voltage-dependent Weibull slope are explained through the associated trap generation during the TDDB stress. Based on this model., accurate TDDB lifetime prediction...
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