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We demonstrate a record-low EOT (equivalent oxide thickness) of 0.8 nm for a metal-insulator-metal (MIM) decoupling capacitor, which is compatible with back-end-of-line (BEOL) processing. This results in 2-plate MIM capacitance density of 43 fF/um2, and leakage current density (Jg) of 5 fA/um2 at 1V, 125 oC. Moreover, we identify that symmetry of CV/IV/TDDB characteristics for both positive and negative...
At the 22 nm node, we estimate that superior electrostatics and reduced junction capacitance in FinFETs may provide a 13~23% reduction in delay relative to planar FETs. However, this benefit is offset by enhanced gate-to-source/drain capacitance (Cgs) in FinFETs. Here, we measure FinFET Cgs capacitance at 22 nm-like dimensions and determine that, with optimization, the FinFET capacitance penalty can...
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