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Ternary alloys of composition close to Cr 2 AlC have been deposited by ion beam sputtering onto unheated and heated to 380 °C Si substrates. As-deposited films are amorphous. Annealing of the film in vacuum at 700 °C leads to crystallisation with 39.2 nm crystallites. Crystallisation also can be achieved by annealing in air but there is also partial oxidation of the film surface to the depth...
Strained silicon/SiGe alloy films have attracted interest in recent years because of their importance for high-speed microelectronic devices. In order to achieve such speed increases, devices are made from silicon with a tensile strain introduced by epitaxial deposition onto a SiGe alloy with a larger lattice parameter. In this study, strained silicon layers grown on SiGe virtual substrates have been...
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