The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Editor’s note: Phase change memory, spin-transfer torque random access memory, and resistive random access memory are three major emerging memory technologies that receive tremendous attentions from both academia and industry. In this survey article, the authors summarize the latest research progress of these technologies in device engineering, circuit design, computer architecture, and application...
The severe concerns about continuous scaling of mainstream memories motivated recent globalwise research on emerging memory technologies. Many promising characteristics, i.e., high integration density, nonvolatility, fast access time, good CMOS process compatibility, and radiation resilience, are demonstrated by various emerging memory candidates. Some of these technologies, such as phase change memory...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.