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We design a kind of mixed high-index-contrast subwavelength grating/distributed Bragg reflector (HCG/DBR) multilayer reflectors. The mixed HCG/DBR multilayer reflectors provide a broadband high reflectivity characteristic with several pairs which can replace conventional DBRs of InP-based materials. By applying the epitaxial lateral overgrowth (ELO), the design structure turns into a virtual InP substrate...
An InGaAs/AlGaAs quantum-well laser structure was grown on a silicon substrate by adopting a three-step grown thin (1.8 μm) and simple buffer layer. The whole structure was grown by metalorganic chemical vapor deposition. The material quality was characterized by transmission electron microscopy, photoluminescence spectra, and electrochemical capacitance–voltage profiler. It shows that the threading...
GaAs/InGaAs/GaAs core-multishell nanowire heterostructure with a thin InGaAs quantum well is fabricated. Photoluminescence of the quantum well exhibits a blue shift along the nanowire due to the difference of diffusion length between In and Ga.
Growth and characterization of GaAs/AlGaAs core-shell nanowires (NWs) are reported. Using the VLS (vapor-liquid-solid) mechanism, GaAs NWs oriented perpendicularly to the substrate were grown on GaAs (111) B substrate. Using the metalorganic chemical vapor deposition (MOCVD) growth mode, AlGaAs shells were grown on GaAs NWs sidewalls. Single crystal and pure zinc-blende structure are achieved for...
Three samples of GaAs NWs grown with different n-type dopants flux rates were researched. From SEM figures, we can find that all NWs are vertical to the substrate and no lateral growth occurs. The growth rate is proportional the flux rates of n-type dopant SiH4. Larger SiH4 flux rate results in larger growth rate of NWs. For n-doped NWs, their growth were affected by Gibbs-Thomson effect, which is...
This paper investigates the influence of the GaAs substrate on the transmission performance of quarter-wave-stacks' Distributed Brag Reflector (DBR)-based Fabry-Pérot (F-P) filter formed by heteroepitaxial growth, using Transfer Matrix Method (TMM) theoretically. According to our simulation, the designed resonant transmission peak of the filter deteriorates by splitting up with the substrate thickness...
Vertical p-type Gallium arsenide (GaAs) nanowires with pure zinc blende structure were grown on GaAs (111) B substrate by metal-organic chemical vapor deposition via Au-catalyst vapor-liquid-solid mechanism. The p-type doping was investigated by additional diethyl zinc (DEZn). In high II/III ratio range (II/II>;9.1%), there exists a critical length, beyond which the kinking takes place. Two possible...
We have investigated the growth and photoluminescence (PL) characteristics of GaAs/AlGaAs core-multishell nanowires (NWs). Theses NWs are grown by means of vapor-liquid-solid (VLS) method for cores growth and metalorganic chemical vapor deposition (MOCVD) for multishell growth on GaAs (111)B substrate. The crystallographic quality is perfect in the body of GaAs/AlGaAs core-multishell NWs and a small...
GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs(111)B substrates via Au catalyzed vapor-liquid-solid mechanism. We found that the grown nanowires are rode-like shape and the growth rate is independent on its diameters. It can be concluded that the nanowire was grown with main contributions from direct impingement of vapor species onto the Au-Ga droplets and with negligible...
An approach for Si/Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the Si fracture energy by annealing at 180°C. The properties of the bonded structures were studied in terms of the interface shape, electrical and optical characteristic through SEM, and interface I-V curve.
GaAs nanowires were grown on GaAs(111)B substrates via VLS mechanism with various Au film thickness. Experiment results indicated that thicker Au film results in larger diameters, more dispersed size distribution, and lower density of the nanowires. The growth rate is independent on diameters, while it decreases with the density.
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