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Growth and characterization of GaAs/AlGaAs core-shell nanowires (NWs) are reported. Using the VLS (vapor-liquid-solid) mechanism, GaAs NWs oriented perpendicularly to the substrate were grown on GaAs (111) B substrate. Using the metalorganic chemical vapor deposition (MOCVD) growth mode, AlGaAs shells were grown on GaAs NWs sidewalls. Single crystal and pure zinc-blende structure are achieved for...
We have investigated the growth and photoluminescence (PL) characteristics of GaAs/AlGaAs core-multishell nanowires (NWs). Theses NWs are grown by means of vapor-liquid-solid (VLS) method for cores growth and metalorganic chemical vapor deposition (MOCVD) for multishell growth on GaAs (111)B substrate. The crystallographic quality is perfect in the body of GaAs/AlGaAs core-multishell NWs and a small...
GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs(111)B substrates via Au catalyzed vapor-liquid-solid mechanism. We found that the grown nanowires are rode-like shape and the growth rate is independent on its diameters. It can be concluded that the nanowire was grown with main contributions from direct impingement of vapor species onto the Au-Ga droplets and with negligible...
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